Trina Solar sets 23.22% record with n-type i-TOPCon cell
Trina Solar lab. Owner: Mark Wolff
Chinese photovoltaics (PV) maker Trina Solar Co Ltd on Tuesday unveiled a new world record of 23.22% for a high-efficiency large-area quasi-monocrystalline n-type (c-Si) i-TOPCon solar cell.
The company said that the record was set at the State Key Laboratory (SKL) of PV Science and Technology (PVST) of China and was independently confirmed by the ISFH CalTeC in Germany.
The 247.79-sq-cm (38.41 sq inch) cell was fabricated with a low-cost industrial process of advanced Industrial Tunnel Oxide Passivated Contact (i-TOPCon) technologies, on a large-sized phosphorus-doped Cast-mono Si substrate.
"To the best of our knowledge, this is the new world record for a total-area efficiency for a large-area cast-mono silicon solar cell," said Zhiqiang Feng, director of SKL of PV Science and Technology of Trina Solar.
In May, the company set a record of 24.58% for a high-efficiency n-type c-Si i-TOPCon solar cell, fabricated on a large-sized 244.62-sq-cm wafer.